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Integrated RF Photonic Devices Based on Crystal Ion Sliced Lithium Niobate

Integrated RF Photonic Devices Based on Crystal Ion Sliced Lithium Niobate

Abstract
This paper reports on the development of thin film lithium niobate (TFLN™) electro-optic devices at SRICO.
TFLN™ is formed on various substrates using a layer transfer process called crystal ion slicing. In the ion slicing process, light ions such as helium and hydrogen are implanted at a depth in a bulk seed wafer as determined by the implant energy. After wafer bonding to a suitable handle substrate, the implanted seed wafer is separated (sliced) at the implant depth using a wet etching or thermal splitting step. After annealing and polishing of the slice surface, the transferred film is bulk quality, retaining all the favorable properties of the bulk seed crystal. Ion slicing technology opens up a vast design space to produce lithium niobate electro-optic devices that were not possible using bulk substrates or physically deposited films. For broadband electro-optic modulation, TFLN™ is formed on RF friendly
substrates to achieve impedance matched operation at up to 100 GHz or more. For narrowband RF filtering functions, a quasi-phase matched modulator is presented that incorporates domain engineering to implement periodic inversion of electro-optic phase. The thinness of the ferro electric films makes it possible to in situ program the domains, and thus the filter response, using only few tens of applied volts. A planar poled prism optical beam steering device is also presented that is suitable for optically switched true time delay architectures. Commercial applications of the TFLN™ device technologies include high bandwidth fiber optic links, cellular antenna remoting, photonic microwave signal processing, optical switching and phased arrayed radar
Vincent Stenger
James Toney
Andrea Pollick
James Busch
Jon Scholl
Peter Pontius
Sri Sriram

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